BSS138LT1G vs MMBF170LT1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS138LT1G disebabkan oleh onsemi dan MMBF170LT1 disebabkan oleh onsemi. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSS138LT1G MMBF170LT1
Merek onsemi onsemi
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET N-Channel MOSFET, Enhancement Mode
Drain-Source Voltage (VDS) 50 V —
Continuous Drain Current (ID) 200 mA (Ta) 500 mA (Ta)
Power Dissipation (PD) 225 mW (Ta) —
On-Resistance Max (RDS(on)) 3.5 ohm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Gate-Source Voltage Max (VGS) [DATA_NEEDED: maximum gate-source voltage] —
Configuration Single FET —
Channel Mode Enhancement Mode —
Kemasan SOT-23-3 (TO-236) —
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi [DATA_NEEDED: operating temperature range] —
Status RoHS Compliant (RoHS Compliant and Pb-free per Easybom) Compliant (per onsemi product page)
Product Family BSS138LT Series Small Signal MOSFET —
Typical Applications Computers, printers, cordless phones, DC-DC converters —
Manufacturer — onsemi (ON Semiconductor)
Part Number — MMBF170LT1
Drain-Source Voltage (VDSS) — 60 V
Drain-Gate Voltage (VDGS) — 60 Vdc
Gate-Source Voltage - Continuous (VGS) — ±20 Vdc (per datasheet)
Gate-Source Voltage - Non-repetitive (VGSM) — ±40 Vpk (tp <= 50 ms)
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed value]
Total Device Dissipation (PD) — 225 mW (Ta, FR-5 board)
Gambaran Suhu Operasi — -55 °C to +150 °C (TJ max per datasheet)
Kemasan / Case — SOT-23-3 (TO-236)
Kiraan Pin — 3
AEC-Q101 Qualified — Yes (per datasheet)
Technology — DMOS
Polarity — N-Channel

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