BSS308PEH6327XTSA1 vs IRLML6346TRPBF Perbandingan
Perbandingan bersamaan detil BSS308PEH6327XTSA1 dari Infineon dan IRLML6346TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSS308PEH6327XTSA1 - P-Ch -30V -2A OptiMOS MOSFET | Infineon | SOT-23
BSS308PEH6327XTSA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | BSS308PEH6327XTSA1 | IRLML6346TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS P (small signal / small power MOSFET) | — |
| Tipe Transistor | P-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | -30 V | 30 V |
| Continuous Drain Current (ID) | -2 A (Ta) | 3.4 A (TA=25C) |
| RDS(on) Max | 80 mΩ at VGS = -10 V | — |
| Gate-Source Voltage (VGS) Max | +/-20 V | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| Rentang Suhu Kerja | -55 °C to +150 °C | — |
| Paket / Case | PG-SOT23 (SOT-23-3) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 | — |
| Qualification | AEC-Q101 Automotive | — |
| Status RoHS | Compliant | Compliant |
| Packaging | Tape & Reel (T/R) | — |
| Standard Reel Quantity | 3000 pcs | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) value] |
| Polarity | — | N-Channel |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max @ VGS=2.5V | — | 63 mOhm |
| RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Drive Capability | — | 2.5V logic-level |
| Maximum Power Dissipation (PD) | — | 1.3 W (TA=25C, 1in2 FR4) |
| Suhu Hubung Kerja | — | -55C to +150C |
| Paket | — | Micro3 / SOT-23 |
| Technology | — | HEXFET Power MOSFET |
| Level MSL | — | 1 |
| Lead-Free Finish | — | Yes (PBF suffix) |