BSS308PEH6327XTSA1 vs IRLML6346TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS308PEH6327XTSA1 disebabkan oleh Infineon dan IRLML6346TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSS308PEH6327XTSA1 - P-Ch -30V -2A OptiMOS MOSFET | Infineon | SOT-23
BSS308PEH6327XTSA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSS308PEH6327XTSA1 | IRLML6346TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS P (small signal / small power MOSFET) | — |
| Jenis Transistor | P-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | -30 V | 30 V |
| Continuous Drain Current (ID) | -2 A (Ta) | 3.4 A (TA=25C) |
| RDS(on) Max | 80 mΩ at VGS = -10 V | — |
| Gate-Source Voltage (VGS) Max | +/-20 V | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| Gambaran Suhu Operasi | -55 °C to +150 °C | — |
| Kemasan / Case | PG-SOT23 (SOT-23-3) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Bilangan Pin | 3 | — |
| Qualification | AEC-Q101 Automotive | — |
| Status RoHS | Compliant | Compliant |
| Packaging | Tape & Reel (T/R) | — |
| Standard Reel Quantity | 3000 pcs | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) value] |
| Polarity | — | N-Channel |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max @ VGS=2.5V | — | 63 mOhm |
| RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Drive Capability | — | 2.5V logic-level |
| Maximum Power Dissipation (PD) | — | 1.3 W (TA=25C, 1in2 FR4) |
| Suhu Hubungan Operasi | — | -55C to +150C |
| Kemasan | — | Micro3 / SOT-23 |
| Technology | — | HEXFET Power MOSFET |
| Aras MSL | — | 1 |
| Lead-Free Finish | — | Yes (PBF suffix) |