BSS308PEH6327XTSA1 vs IRLML6346TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSS308PEH6327XTSA1 sa pamamagitan ng Infineon at IRLML6346TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRLML6346TRPBF IRLML6346TRPBF - 30V 3.4A N-Ch HEXFET MOSFET | Infineon

IRLML6346TRPBF - 30V 3.4A N-Ch HEXFET MOSFET | Infineon

IRLML6346TRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSS308PEH6327XTSA1 IRLML6346TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Part Family OptiMOS P (small signal / small power MOSFET) —
Uri ng Transistor P-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) -30 V 30 V
Continuous Drain Current (ID) -2 A (Ta) 3.4 A (TA=25C)
RDS(on) Max 80 mΩ at VGS = -10 V —
Gate-Source Voltage (VGS) Max +/-20 V —
Power Dissipation (PD) 500 mW (Ta) —
Hanay ng Temperature na Operasyon -55 °C to +150 °C —
Packhaging / Kaso PG-SOT23 (SOT-23-3) —
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pins 3 —
Qualification AEC-Q101 Automotive —
Tindminan RoHS Compliant Compliant
Packaging Tape & Reel (T/R) —
Standard Reel Quantity 3000 pcs —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th) value]
Polarity — N-Channel
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
RDS(on) max @ VGS=2.5V — 63 mOhm
RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate Drive Capability — 2.5V logic-level
Maximum Power Dissipation (PD) — 1.3 W (TA=25C, 1in2 FR4)
Temperature ng Junction na Operasyon — -55C to +150C
Packhaging — Micro3 / SOT-23
Technology — HEXFET Power MOSFET
Level ng MSL — 1
Lead-Free Finish — Yes (PBF suffix)

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