BSS806NEH6327XTSA1 vs BSS126H6327XTSA2 Perbandingan
Perbandingan bersamaan detil BSS806NEH6327XTSA1 dari Infineon dan BSS126H6327XTSA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSS806NEH6327XTSA1 | BSS126H6327XTSA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSS806NEH6327XTSA1 | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Mode of Operation | Enhancement-mode | — |
| Drain-Source Voltage (VDS) | 20 V (maximum) | — |
| Continuous Drain Current (ID) | 2.3 A (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| On-Resistance RDS(on) | 57 mOhm (maximum) | — |
| Paket | PG-SOT23 (SOT-23-3) | SOT-23-3 (PG-SOT23) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 (Gate, Drain, Source) | 3 |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Yes (compliant) | — |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range] | -55C to +150C (junction, typical) |
| FET Type | — | N-Channel Depletion Mode |
| Drain-Source Voltage (VDS) Max | — | 600 V |
| Continuous Drain Current (ID) at Ta | — | 21 mA |
| Power Dissipation (PD) at Ta | — | 500 mW |
| On-Resistance (RDS(on)) Max | — | 500 ohm (typical for depletion-mode) |
| Gate-Source Voltage (VGS) Range | — | [DATA_NEEDED: VGS max/min] |
| Technology | — | SIPMOS (DMOS) |
| Configuration | — | Single |
| Channel Mode | — | Depletion (normally-on at VGS = 0) |
| Level MSL | — | 1 (per JEDEC J-STD-020) |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Bebas Halogen | — | Yes (Infineon 'green' package) |