BSS806NEH6327XTSA1 vs BSS126H6327XTSA2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS806NEH6327XTSA1 disebabkan oleh Infineon dan BSS126H6327XTSA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSS806NEH6327XTSA1 | BSS126H6327XTSA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSS806NEH6327XTSA1 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Mode of Operation | Enhancement-mode | — |
| Drain-Source Voltage (VDS) | 20 V (maximum) | — |
| Continuous Drain Current (ID) | 2.3 A (Ta) | — |
| Power Dissipation (PD) | 500 mW (Ta) | — |
| On-Resistance RDS(on) | 57 mOhm (maximum) | — |
| Kemasan | PG-SOT23 (SOT-23-3) | SOT-23-3 (PG-SOT23) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 3 (Gate, Drain, Source) | 3 |
| Lead Plating | Pb-free | — |
| RoHS Compliance | Yes (compliant) | — |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| Gambaran Suhu Operasi | [DATA_NEEDED: operating temperature range] | -55C to +150C (junction, typical) |
| FET Type | — | N-Channel Depletion Mode |
| Drain-Source Voltage (VDS) Max | — | 600 V |
| Continuous Drain Current (ID) at Ta | — | 21 mA |
| Power Dissipation (PD) at Ta | — | 500 mW |
| On-Resistance (RDS(on)) Max | — | 500 ohm (typical for depletion-mode) |
| Gate-Source Voltage (VGS) Range | — | [DATA_NEEDED: VGS max/min] |
| Technology | — | SIPMOS (DMOS) |
| Configuration | — | Single |
| Channel Mode | — | Depletion (normally-on at VGS = 0) |
| Aras MSL | — | 1 (per JEDEC J-STD-020) |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes (Infineon 'green' package) |