BSS87H6327FTSA1 vs BSS127H6327XTSA2 Perbandingan

Perbandingan bersamaan detil BSS87H6327FTSA1 dari Infineon dan BSS127H6327XTSA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSS87H6327FTSA1 BSS127H6327XTSA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel enhancement-mode N-Channel SIPMOS, enhancement mode
Drain-Source Voltage (VDS) 240 V 600 V
Continuous Drain Current (ID) 260 mA (Ta) 21 mA (Ta)
Power Dissipation (PD) 1 W (Ta) —
Drain-Source On-Resistance (RDS(on)) 6 ohm max at VGS=10V —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] 4.5 V (logic level, rated)
Paket PG-SOT89-4-2 (SOT-89) SOT-23-3 (PG-SOT23)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C (junction) —
Jumlah Pin 3 (Gate / Drain / Source) 3
Automotive Qualification AEC-Q101 qualified AEC-Q101
Status RoHS Compliant Compliant (lead-free)
Lead-Free / Pb-Free Yes (Pb-free plating) —
Level MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Process Technology Vertical DMOS —
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed ID limit]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
On-State Resistance (RDS(on)) max — 500 ohm at ID = 21 mA
Total Power Dissipation (Ptot) — 500 mW (Ta)
Suhu Hubung Kerja — -55 C to +150 C
dv/dt Rated — Yes
Bebas Halogen — Yes, per IEC 61249-2-21

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