BSS87H6327FTSA1 vs BSS127H6327XTSA2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSS87H6327FTSA1 sa pamamagitan ng Infineon at BSS127H6327XTSA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | BSS87H6327FTSA1 | BSS127H6327XTSA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel enhancement-mode | N-Channel SIPMOS, enhancement mode |
| Drain-Source Voltage (VDS) | 240 V | 600 V |
| Continuous Drain Current (ID) | 260 mA (Ta) | 21 mA (Ta) |
| Power Dissipation (PD) | 1 W (Ta) | — |
| Drain-Source On-Resistance (RDS(on)) | 6 ohm max at VGS=10V | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 4.5 V (logic level, rated) |
| Packhaging | PG-SOT89-4-2 (SOT-89) | SOT-23-3 (PG-SOT23) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +150C (junction) | — |
| Bilang ng Pin | 3 (Gate / Drain / Source) | 3 |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Tindminan RoHS | Compliant | Compliant (lead-free) |
| Lead-Free / Pb-Free | Yes (Pb-free plating) | — |
| Level ng MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Process Technology | Vertical DMOS | — |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed ID limit] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| On-State Resistance (RDS(on)) max | — | 500 ohm at ID = 21 mA |
| Total Power Dissipation (Ptot) | — | 500 mW (Ta) |
| Temperature ng Junction na Operasyon | — | -55 C to +150 C |
| dv/dt Rated | — | Yes |
| Wala sa Halogen | — | Yes, per IEC 61249-2-21 |