BSS87H6327FTSA1 vs BSS127H6327XTSA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS87H6327FTSA1 disebabkan oleh Infineon dan BSS127H6327XTSA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSS87H6327FTSA1 BSS127H6327XTSA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel enhancement-mode N-Channel SIPMOS, enhancement mode
Drain-Source Voltage (VDS) 240 V 600 V
Continuous Drain Current (ID) 260 mA (Ta) 21 mA (Ta)
Power Dissipation (PD) 1 W (Ta) —
Drain-Source On-Resistance (RDS(on)) 6 ohm max at VGS=10V —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] 4.5 V (logic level, rated)
Kemasan PG-SOT89-4-2 (SOT-89) SOT-23-3 (PG-SOT23)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (junction) —
Kiraan Pin 3 (Gate / Drain / Source) 3
Automotive Qualification AEC-Q101 qualified AEC-Q101
Status RoHS Compliant Compliant (lead-free)
Lead-Free / Pb-Free Yes (Pb-free plating) —
Aras MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Process Technology Vertical DMOS —
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed ID limit]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
On-State Resistance (RDS(on)) max — 500 ohm at ID = 21 mA
Total Power Dissipation (Ptot) — 500 mW (Ta)
Suhu Hubungan Operasi — -55 C to +150 C
dv/dt Rated — Yes
Boson Bebas — Yes, per IEC 61249-2-21

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