CGD65C055SP2 vs CGD65A055S2 Perbandingan
Perbandingan bersamaan detil CGD65C055SP2 dari Cambridge GaN Devices dan CGD65A055S2 dari Cambridge GaN Devices. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Cambridge GaN Devices
CGD65C055SP2 - 650V 27A GaN HEMT, BHDFN-9-1 | Cambridge GaN Devices
CGD65C055SP2 ✓ AktifCambridge GaN Devices
CGD65A055S2 - 650V 55mΩ GaN HEMT with ICeGaN Gate | Cambridge GaN Devices
CGD65A055S2 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | CGD65C055SP2 | CGD65A055S2 |
|---|---|---|
| Merek | Cambridge GaN Devices | Cambridge GaN Devices |
| Kategori | MOSFETs | Transistors |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Cambridge GaN Devices (CGD) | Cambridge GaN Devices |
| Part Number | CGD65C055SP2 | — |
| Tipe Transistor | N-Channel GaN HEMT (Enhancement Mode, Normally-Off) | — |
| Drain-Source Voltage (V_DS max) | 650 V | — |
| Continuous Drain Current (I_D) | 27 A | — |
| On-Resistance (R_DS(on)) | 55 mΩ | — |
| Gate Threshold Voltage (V_TH) | 3 V | — |
| Gate Drive Voltage Range | 9 V to 20 V | — |
| Gate Turn-Off Voltage | 0 V (genuine 0 V turn-off per ICeGaN) | — |
| Technology | ICeGaN® GaN-on-Si, enhancement-mode | GaN-on-Si HEMT (enhancement mode) |
| Paket | BHDFN-9-1 (Bottom-side cooled, wettable flank) | 16-pin DFN 8x8 mm |
| Tipe Mounting | Surface Mount | Surface Mount |
| Channel Type | N-Channel | N-Channel |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range] | — |
| Thermal Resistance Junction-to-Case (R_thJC) | [DATA_NEEDED: R_thJC in C/W] | — |
| Status RoHS | Compliant | Compliant (lead-free) |
| Lead-Free | Yes | — |
| Level MSL | [DATA_NEEDED: MSL level] | — |
| Drain-to-Source Voltage (VDS) | — | 650 V |
| On-Resistance (RDS(on)) | — | 55 mΩ |
| Arus Alir Berlanjut (TC=25°C) | — | 27 A |
| Gate Technology | — | ICeGaN™ (standard-driver compatible) |
| Current Sense Pin | — | Yes (integrated CS output) |
| Integrated Protection Circuit | — | NL³ (non-linear low-loss) |
| Reverse Recovery Charge (Qrr) | — | 0 nC (zero, typical for GaN) |
| Operating Mode | — | Enhancement-mode (normally-off) |
| Polarity | — | Single FET |