CGD65C055SP2 vs CGD65A055S2 比較
詳細並排比較 CGD65C055SP2 由 Cambridge GaN Devices 與 CGD65A055S2 由 Cambridge GaN Devices. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Cambridge GaN Devices
CGD65C055SP2 - 650V 27A GaN HEMT, BHDFN-9-1 | Cambridge GaN Devices
CGD65C055SP2 ✓ 啟用中Cambridge GaN Devices
CGD65A055S2 - 650V 55mΩ GaN HEMT with ICeGaN Gate | Cambridge GaN Devices
CGD65A055S2 ✓ 啟用中規格比較
| 參數 | CGD65C055SP2 | CGD65A055S2 |
|---|---|---|
| 品牌 | Cambridge GaN Devices | Cambridge GaN Devices |
| 類別 | MOSFETs | Transistors |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Cambridge GaN Devices (CGD) | Cambridge GaN Devices |
| Part Number | CGD65C055SP2 | — |
| 電晶體類型 | N-Channel GaN HEMT (Enhancement Mode, Normally-Off) | — |
| Drain-Source Voltage (V_DS max) | 650 V | — |
| Continuous Drain Current (I_D) | 27 A | — |
| On-Resistance (R_DS(on)) | 55 mΩ | — |
| Gate Threshold Voltage (V_TH) | 3 V | — |
| Gate Drive Voltage Range | 9 V to 20 V | — |
| Gate Turn-Off Voltage | 0 V (genuine 0 V turn-off per ICeGaN) | — |
| Technology | ICeGaN® GaN-on-Si, enhancement-mode | GaN-on-Si HEMT (enhancement mode) |
| 封裝 | BHDFN-9-1 (Bottom-side cooled, wettable flank) | 16-pin DFN 8x8 mm |
| 安裝類型 | Surface Mount | Surface Mount |
| Channel Type | N-Channel | N-Channel |
| 工作溫度範圍 | [DATA_NEEDED: operating temperature range] | — |
| Thermal Resistance Junction-to-Case (R_thJC) | [DATA_NEEDED: R_thJC in C/W] | — |
| RoHS 狀態 | Compliant | Compliant (lead-free) |
| Lead-Free | Yes | — |
| MSL 等級 | [DATA_NEEDED: MSL level] | — |
| Drain-to-Source Voltage (VDS) | — | 650 V |
| On-Resistance (RDS(on)) | — | 55 mΩ |
| 連續汲極電流 (TC=25°C) | — | 27 A |
| Gate Technology | — | ICeGaN™ (standard-driver compatible) |
| Current Sense Pin | — | Yes (integrated CS output) |
| Integrated Protection Circuit | — | NL³ (non-linear low-loss) |
| Reverse Recovery Charge (Qrr) | — | 0 nC (zero, typical for GaN) |
| Operating Mode | — | Enhancement-mode (normally-off) |
| Polarity | — | Single FET |