CGD65C055SP2 vs CGD65A055S2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng CGD65C055SP2 sa pamamagitan ng Cambridge GaN Devices at CGD65A055S2 sa pamamagitan ng Cambridge GaN Devices. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Cambridge GaN Devices
CGD65C055SP2 - 650V 27A GaN HEMT, BHDFN-9-1 | Cambridge GaN Devices
CGD65C055SP2 ✓ NakahandaCambridge GaN Devices
CGD65A055S2 - 650V 55mΩ GaN HEMT with ICeGaN Gate | Cambridge GaN Devices
CGD65A055S2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | CGD65C055SP2 | CGD65A055S2 |
|---|---|---|
| Brand | Cambridge GaN Devices | Cambridge GaN Devices |
| Kategorya | MOSFETs | Transistors |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Cambridge GaN Devices (CGD) | Cambridge GaN Devices |
| Part Number | CGD65C055SP2 | — |
| Uri ng Transistor | N-Channel GaN HEMT (Enhancement Mode, Normally-Off) | — |
| Drain-Source Voltage (V_DS max) | 650 V | — |
| Continuous Drain Current (I_D) | 27 A | — |
| On-Resistance (R_DS(on)) | 55 mΩ | — |
| Gate Threshold Voltage (V_TH) | 3 V | — |
| Gate Drive Voltage Range | 9 V to 20 V | — |
| Gate Turn-Off Voltage | 0 V (genuine 0 V turn-off per ICeGaN) | — |
| Technology | ICeGaN® GaN-on-Si, enhancement-mode | GaN-on-Si HEMT (enhancement mode) |
| Packhaging | BHDFN-9-1 (Bottom-side cooled, wettable flank) | 16-pin DFN 8x8 mm |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Channel Type | N-Channel | N-Channel |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | — |
| Thermal Resistance Junction-to-Case (R_thJC) | [DATA_NEEDED: R_thJC in C/W] | — |
| Tindminan RoHS | Compliant | Compliant (lead-free) |
| Lead-Free | Yes | — |
| Level ng MSL | [DATA_NEEDED: MSL level] | — |
| Drain-to-Source Voltage (VDS) | — | 650 V |
| On-Resistance (RDS(on)) | — | 55 mΩ |
| Patuloy na Drain Current (TC=25°C) | — | 27 A |
| Gate Technology | — | ICeGaN™ (standard-driver compatible) |
| Current Sense Pin | — | Yes (integrated CS output) |
| Integrated Protection Circuit | — | NL³ (non-linear low-loss) |
| Reverse Recovery Charge (Qrr) | — | 0 nC (zero, typical for GaN) |
| Operating Mode | — | Enhancement-mode (normally-off) |
| Polarity | — | Single FET |