CGD65C055SP2 vs CGD65A055S2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci CGD65C055SP2 disebabkan oleh Cambridge GaN Devices dan CGD65A055S2 disebabkan oleh Cambridge GaN Devices. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Cambridge GaN Devices
CGD65C055SP2 - 650V 27A GaN HEMT, BHDFN-9-1 | Cambridge GaN Devices
CGD65C055SP2 ✓ AktifCambridge GaN Devices
CGD65A055S2 - 650V 55mΩ GaN HEMT with ICeGaN Gate | Cambridge GaN Devices
CGD65A055S2 ✓ AktifPengandingan Spesifikasi
| Parametr | CGD65C055SP2 | CGD65A055S2 |
|---|---|---|
| Merek | Cambridge GaN Devices | Cambridge GaN Devices |
| Kategori | MOSFETs | Transistors |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Cambridge GaN Devices (CGD) | Cambridge GaN Devices |
| Part Number | CGD65C055SP2 | — |
| Jenis Transistor | N-Channel GaN HEMT (Enhancement Mode, Normally-Off) | — |
| Drain-Source Voltage (V_DS max) | 650 V | — |
| Continuous Drain Current (I_D) | 27 A | — |
| On-Resistance (R_DS(on)) | 55 mΩ | — |
| Gate Threshold Voltage (V_TH) | 3 V | — |
| Gate Drive Voltage Range | 9 V to 20 V | — |
| Gate Turn-Off Voltage | 0 V (genuine 0 V turn-off per ICeGaN) | — |
| Technology | ICeGaN® GaN-on-Si, enhancement-mode | GaN-on-Si HEMT (enhancement mode) |
| Kemasan | BHDFN-9-1 (Bottom-side cooled, wettable flank) | 16-pin DFN 8x8 mm |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Channel Type | N-Channel | N-Channel |
| Gambaran Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| Thermal Resistance Junction-to-Case (R_thJC) | [DATA_NEEDED: R_thJC in C/W] | — |
| Status RoHS | Compliant | Compliant (lead-free) |
| Lead-Free | Yes | — |
| Aras MSL | [DATA_NEEDED: MSL level] | — |
| Drain-to-Source Voltage (VDS) | — | 650 V |
| On-Resistance (RDS(on)) | — | 55 mΩ |
| Arus Kumpal Tetap (TC=25°C) | — | 27 A |
| Gate Technology | — | ICeGaN™ (standard-driver compatible) |
| Current Sense Pin | — | Yes (integrated CS output) |
| Integrated Protection Circuit | — | NL³ (non-linear low-loss) |
| Reverse Recovery Charge (Qrr) | — | 0 nC (zero, typical for GaN) |
| Operating Mode | — | Enhancement-mode (normally-off) |
| Polarity | — | Single FET |