FDS6575 vs IRF7416TRPBF Perbandingan
Perbandingan bersamaan detil FDS6575 dari onsemi dan IRF7416TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | FDS6575 | IRF7416TRPBF |
|---|---|---|
| Merek | onsemi | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -20 V | — |
| Continuous Drain Current (ID) | -10 A | — |
| On-Resistance (RDS(on)) | 13 mOhm max at VGS = -4.5 V | — |
| Gate Drive Voltage Range | 2.5 V to 8 V | — |
| Tegangan Batas Gerbang | [DATA_NEEDED: gate threshold voltage range] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | 61 nC |
| Technology | PowerTrench (rugged gate) | HEXFET (IR MOSFET) |
| Paket | SOIC-8 (SO-8) | 8-SO (SOIC-8) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Power Dissipation | [DATA_NEEDED: power dissipation at TA] | — |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range] | — |
| Configuration | Single MOSFET | — |
| Gate Source Voltage (VGS) Range | [DATA_NEEDED: VGS max rating] | — |
| Status RoHS | Compliant | Compliant |
| FET Type | — | P-Channel |
| Drain-to-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) at TA=25C | — | -10 A |
| Pulsed Drain Current (IDM) | — | -50 A |
| Static Drain-to-Source On-Resistance (RDS(on)) max | — | 20 mOhm at VGS = -10 V |
| Gate-to-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | -1 V to -3 V |
| Power Dissipation (PD) max at TA=25C | — | 2.5 W |
| Thermal Resistance, Junction-to-Ambient (RthJA) | — | 50 C/W |
| Rentang Suhu Hubung Kerja | — | -55 C to +150 C |
| Lead-Free | — | Yes |
| Level MSL | — | 1 (unlimited) |