FDS6575 vs IRF7416TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci FDS6575 disebabkan oleh onsemi dan IRF7416TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | FDS6575 | IRF7416TRPBF |
|---|---|---|
| Merek | onsemi | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -20 V | — |
| Continuous Drain Current (ID) | -10 A | — |
| On-Resistance (RDS(on)) | 13 mOhm max at VGS = -4.5 V | — |
| Gate Drive Voltage Range | 2.5 V to 8 V | — |
| Tegangan Had Kepasaran | [DATA_NEEDED: gate threshold voltage range] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | 61 nC |
| Technology | PowerTrench (rugged gate) | HEXFET (IR MOSFET) |
| Kemasan | SOIC-8 (SO-8) | 8-SO (SOIC-8) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Power Dissipation | [DATA_NEEDED: power dissipation at TA] | — |
| Gambaran Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| Configuration | Single MOSFET | — |
| Gate Source Voltage (VGS) Range | [DATA_NEEDED: VGS max rating] | — |
| Status RoHS | Compliant | Compliant |
| FET Type | — | P-Channel |
| Drain-to-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) at TA=25C | — | -10 A |
| Pulsed Drain Current (IDM) | — | -50 A |
| Static Drain-to-Source On-Resistance (RDS(on)) max | — | 20 mOhm at VGS = -10 V |
| Gate-to-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | -1 V to -3 V |
| Power Dissipation (PD) max at TA=25C | — | 2.5 W |
| Thermal Resistance, Junction-to-Ambient (RthJA) | — | 50 C/W |
| Gambaran Suhu Hubungan Operasi | — | -55 C to +150 C |
| Lead-Free | — | Yes |
| Aras MSL | — | 1 (unlimited) |