FDS6575 vs IRF7416TRPBF 比較
詳細並排比較 FDS6575 由 onsemi 與 IRF7416TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | FDS6575 | IRF7416TRPBF |
|---|---|---|
| 品牌 | onsemi | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -20 V | — |
| Continuous Drain Current (ID) | -10 A | — |
| On-Resistance (RDS(on)) | 13 mOhm max at VGS = -4.5 V | — |
| Gate Drive Voltage Range | 2.5 V to 8 V | — |
| 閘極臨界電壓 | [DATA_NEEDED: gate threshold voltage range] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | 61 nC |
| Technology | PowerTrench (rugged gate) | HEXFET (IR MOSFET) |
| 封裝 | SOIC-8 (SO-8) | 8-SO (SOIC-8) |
| 安裝類型 | Surface Mount | Surface Mount |
| Power Dissipation | [DATA_NEEDED: power dissipation at TA] | — |
| 工作溫度範圍 | [DATA_NEEDED: operating temperature range] | — |
| Configuration | Single MOSFET | — |
| Gate Source Voltage (VGS) Range | [DATA_NEEDED: VGS max rating] | — |
| RoHS 狀態 | Compliant | Compliant |
| FET Type | — | P-Channel |
| Drain-to-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) at TA=25C | — | -10 A |
| Pulsed Drain Current (IDM) | — | -50 A |
| Static Drain-to-Source On-Resistance (RDS(on)) max | — | 20 mOhm at VGS = -10 V |
| Gate-to-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | -1 V to -3 V |
| Power Dissipation (PD) max at TA=25C | — | 2.5 W |
| Thermal Resistance, Junction-to-Ambient (RthJA) | — | 50 C/W |
| 工作接面溫度範圍 | — | -55 C to +150 C |
| Lead-Free | — | Yes |
| MSL 等級 | — | 1 (unlimited) |