H5AN4G8NBJR-PBC vs MT40A512M8RH-083E Perbandingan
Perbandingan bersamaan detil H5AN4G8NBJR-PBC dari SK hynix dan MT40A512M8RH-083E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5AN4G8NBJR-PBC | MT40A512M8RH-083E |
|---|---|---|
| Merek | SK hynix | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Memory Density | 4 Gbit | — |
| Organisasi | 512M x 8 | 512M x 8 |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Tipe Antarmuka | Parallel, JEDEC DDR4 | — |
| Supply Voltage VDD | 1.2 V | — |
| Supply Voltage VDDQ | 1.2 V | — |
| Speed Grade | PBC | — |
| Clock Frequency | [DATA_NEEDED: Clock Frequency] | — |
| CAS Latency (CL) | [DATA_NEEDED: CAS Latency] | — |
| Paket | 78-ball FBGA | 78-ball FBGA (9 x 10.5 mm) |
| Tipe Mounting | Surface Mount | — |
| Normal Operating Case Temperature | 0C to 85C | — |
| Extended Temperature Range | up to 95C case (with increased refresh) | — |
| Lead Free | Yes | — |
| Bebas Halogen | Yes | — |
| Refresh | 8n prefetch, standard/auto refresh per DDR4 JEDEC | 64 ms, 8192-cycle refresh (to 95C) |
| Density | — | 4 Gbit |
| Industry Speed Grade | — | DDR4-2400 |
| Clock Rate | — | 1.2 GHz |
| Internal Banks | — | 8 banks (2 groups of 4) |
| Prefetch | — | 8n-bit |
| VDD / VDDQ | — | 1.2 V +/-60 mV |
| VPP | — | 2.5 V, -125 mV/+250 mV |
| I/O Structure | — | 1.2 V pseudo open-drain |
| VREFDQ | — | On-die internal, adjustable generation |
| Suhu Kerja | — | 0C to +95C |
| FBGA Code | — | D9TGG |
| Marking Code | — | D9TGG |
| Data Strobe Preamble | — | Programmable |
| Status RoHS | — | Compliant |
| Latensi CAS | — | [DATA_NEEDED: CAS latency per speed bin table] |