H5AN8G6NAFR-PBC vs H5AN8G6NDJR Perbandingan
Perbandingan bersamaan detil H5AN8G6NAFR-PBC dari SK hynix dan H5AN8G6NDJR dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5AN8G6NAFR-PBC | H5AN8G6NDJR |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| Organisasi | 512M x 16 | 512M x 16 |
| VDD Supply Voltage | 1.20 V +/- 0.06 V | — |
| VDDQ Supply Voltage | 1.20 V +/- 0.06 V | — |
| VPP Supply Voltage | 2.5 V +0.25/-0.125 V | — |
| Tipe Antarmuka | DDR4 (parallel, double data rate) | — |
| Speed Bins Supported | DDR4-1600 / 1866 / 2133 / 2400 (datasheet speed bin tables) | — |
| Refresh | Auto / Self Refresh | — |
| DLL | DLL ON mode for speed bin operation | — |
| Clock | Differential clock (CK/CK#) | — |
| Paket | TFBGA-96 (rectangular) | 96-ball FBGA (13mm x 7.5mm) |
| Number of Terminals | 96 | 96 |
| Tipe Mounting | Surface Mount | — |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | — |
| Status RoHS | Compliant (Lead-Free & Halogen-Free) | — |
| Composition | CMOS | — |
| Laju Data | — | 3200 Mbps (DDR4-3200) |
| Tegangan Pemuat | — | 1.2 V |
| Maximum Supply Voltage (Vsup) | — | 1.26 V |
| Maximum Operating Temperature | — | 85 °C |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| Latensi CAS | — | 22 cycles (at 3200 Mbps) |
| Access Mode | — | Multi Bank Page Burst |
| JESD-30 Code | — | R-PBGA-B96 |
| RoHS | — | Compliant |
| Fitur | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |