H5AN8G8NDJR-XNC vs H5AN8G8NCJR-RDC Perbandingan
Perbandingan bersamaan detil H5AN8G8NDJR-XNC dari SK hynix dan H5AN8G8NCJR-RDC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5AN8G8NDJR-XNC | H5AN8G8NCJR-RDC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Ukuran Memori | 8 Gbit (1 G x 8) | — |
| Laju Data | 3200 MT/s (DDR4-3200) | up to 2666 Mbps |
| Supply Voltage (VDD) | 1.14 V to 1.26 V (nominal 1.2 V) | — |
| I/O Voltage (VDDQ) | 1.14 V to 1.26 V (nominal 1.2 V) | — |
| Operating Temperature (TC) | 0°C to +95°C | — |
| Paket | FBGA-78 (7.5 x 11 mm) | 78-ball FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Memory Organization | 1G x 8 | — |
| Antarmuka | Parallel | DDR4 (JEDEC standard) |
| Clock Frequency | 1.6 GHz (I/O clock) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Packaging | Tray | — |
| Status | Active | — |
| Density | — | 8 Gb (1 GB) |
| Organisasi | — | x8 |
| Tegangan Pemuat | — | 1.2 V (VDD) |
| Bank Architecture | — | 4 bank groups x 4 banks |
| Burst Length | — | BL8 |
| Suhu Kerja | — | [DATA_NEEDED: operating temperature range for -RDC suffix] |
| Latensi CAS | — | [DATA_NEEDED: CAS latency for -RDC speed grade] |
| Generation | — | C-die family (NCJR) |
| Lead Free | — | Yes |
| Bebas Halogen | — | Yes |
| Status RoHS | — | Compliant |