H5AN8G8NDJR-XNC vs H5AN8G8NCJR-RDC 比較
詳細並排比較 H5AN8G8NDJR-XNC 由 SK hynix 與 H5AN8G8NCJR-RDC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5AN8G8NDJR-XNC | H5AN8G8NCJR-RDC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 8 Gbit (1 G x 8) | — |
| 資料速率 | 3200 MT/s (DDR4-3200) | up to 2666 Mbps |
| Supply Voltage (VDD) | 1.14 V to 1.26 V (nominal 1.2 V) | — |
| I/O Voltage (VDDQ) | 1.14 V to 1.26 V (nominal 1.2 V) | — |
| Operating Temperature (TC) | 0°C to +95°C | — |
| 封裝 | FBGA-78 (7.5 x 11 mm) | 78-ball FBGA |
| 安裝類型 | Surface Mount | Surface Mount |
| Memory Organization | 1G x 8 | — |
| 介面 | Parallel | DDR4 (JEDEC standard) |
| Clock Frequency | 1.6 GHz (I/O clock) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Packaging | Tray | — |
| Status | Active | — |
| Density | — | 8 Gb (1 GB) |
| 組織 | — | x8 |
| 供應電壓 | — | 1.2 V (VDD) |
| Bank Architecture | — | 4 bank groups x 4 banks |
| Burst Length | — | BL8 |
| 工作溫度 | — | [DATA_NEEDED: operating temperature range for -RDC suffix] |
| CAS 延遲 | — | [DATA_NEEDED: CAS latency for -RDC speed grade] |
| Generation | — | C-die family (NCJR) |
| Lead Free | — | Yes |
| 無鹵素 | — | Yes |
| RoHS 狀態 | — | Compliant |