IAUC41N06S5L vs IAUC41N06S5N102ATMA1 Perbandingan

Perbandingan bersamaan detil IAUC41N06S5L dari Infineon dan IAUC41N06S5N102ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUC41N06S5L IAUC41N06S5N102ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IAUC41N06S5L —
Technology OptiMOS-5 trench MOSFET —
Drain-Source Voltage (V<sub>DS</sub>) 60 V —
Continuous Drain Current (I<sub>D</sub>) [DATA_NEEDED: I_D max value] —
R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V 10 mΩ typical —
R<sub>DS(on)</sub> at V<sub>GS</sub>=4.5 V [DATA_NEEDED: RDS(on) at 4.5 V] —
Gate Threshold Voltage (V<sub>GS(th)</sub>) Logic-level (around 1.7 V typical) —
Maximum Operating Junction Temperature 175 °C —
Paket TDSON-8 (PG-TDSON-8) PG-TDSON-8-33 (SSO8) Surface Mount
Tipe Mounting Surface Mount Surface Mount
MSL (Moisture Sensitivity Level) MSL1 (up to 260 °C peak reflow) —
Automotive Qualification AEC-Q101 AEC-Q101 (per Infineon automotive MOSFET family)
Channel Type N-channel, Enhancement mode —
Status RoHS Compliant (Green Product) Compliant
Lead-Free Yes —
Gate-Source Voltage (V<sub>GS</sub>) max [DATA_NEEDED: V_GS max absolute rating] —
Part Family — OptiMOS 5 Power-Transistor
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, Tc) — 47 A (Tj)
Power Dissipation (PD, Tc=25C) — 42 W
On-Resistance (RDS(on)) — 10.2 mΩ at VGS=10 V, ID=20 A
Gate-Source Threshold (VGS(th)) — 3.4 V (typical)
Total Gate Charge (QG) — 12.5 nC
Rentang Suhu Kerja — -55C to +175C (junction)
Channel Polarity — N-Channel (single)

Spek dan Sumber

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