IAUC41N06S5L vs IAUC41N06S5N102ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUC41N06S5L sa pamamagitan ng Infineon at IAUC41N06S5N102ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΩ OptiMOS 5 N-FET | Infineon
IAUC41N06S5N102ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUC41N06S5L | IAUC41N06S5N102ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUC41N06S5L | — |
| Technology | OptiMOS-5 trench MOSFET | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 60 V | — |
| Continuous Drain Current (I<sub>D</sub>) | [DATA_NEEDED: I_D max value] | — |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | 10 mΩ typical | — |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=4.5 V | [DATA_NEEDED: RDS(on) at 4.5 V] | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | Logic-level (around 1.7 V typical) | — |
| Maximum Operating Junction Temperature | 175 °C | — |
| Packhaging | TDSON-8 (PG-TDSON-8) | PG-TDSON-8-33 (SSO8) Surface Mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| MSL (Moisture Sensitivity Level) | MSL1 (up to 260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (per Infineon automotive MOSFET family) |
| Channel Type | N-channel, Enhancement mode | — |
| Tindminan RoHS | Compliant (Green Product) | Compliant |
| Lead-Free | Yes | — |
| Gate-Source Voltage (V<sub>GS</sub>) max | [DATA_NEEDED: V_GS max absolute rating] | — |
| Part Family | — | OptiMOS 5 Power-Transistor |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc) | — | 47 A (Tj) |
| Power Dissipation (PD, Tc=25C) | — | 42 W |
| On-Resistance (RDS(on)) | — | 10.2 mΩ at VGS=10 V, ID=20 A |
| Gate-Source Threshold (VGS(th)) | — | 3.4 V (typical) |
| Total Gate Charge (QG) | — | 12.5 nC |
| Hanay ng Temperature na Operasyon | — | -55C to +175C (junction) |
| Channel Polarity | — | N-Channel (single) |