IAUC41N06S5L vs IAUC41N06S5N102ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC41N06S5L disebabkan oleh Infineon dan IAUC41N06S5N102ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΩ OptiMOS 5 N-FET | Infineon
IAUC41N06S5N102ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUC41N06S5L | IAUC41N06S5N102ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUC41N06S5L | — |
| Technology | OptiMOS-5 trench MOSFET | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 60 V | — |
| Continuous Drain Current (I<sub>D</sub>) | [DATA_NEEDED: I_D max value] | — |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | 10 mΩ typical | — |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=4.5 V | [DATA_NEEDED: RDS(on) at 4.5 V] | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | Logic-level (around 1.7 V typical) | — |
| Maximum Operating Junction Temperature | 175 °C | — |
| Kemasan | TDSON-8 (PG-TDSON-8) | PG-TDSON-8-33 (SSO8) Surface Mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| MSL (Moisture Sensitivity Level) | MSL1 (up to 260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (per Infineon automotive MOSFET family) |
| Channel Type | N-channel, Enhancement mode | — |
| Status RoHS | Compliant (Green Product) | Compliant |
| Lead-Free | Yes | — |
| Gate-Source Voltage (V<sub>GS</sub>) max | [DATA_NEEDED: V_GS max absolute rating] | — |
| Part Family | — | OptiMOS 5 Power-Transistor |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc) | — | 47 A (Tj) |
| Power Dissipation (PD, Tc=25C) | — | 42 W |
| On-Resistance (RDS(on)) | — | 10.2 mΩ at VGS=10 V, ID=20 A |
| Gate-Source Threshold (VGS(th)) | — | 3.4 V (typical) |
| Total Gate Charge (QG) | — | 12.5 nC |
| Gambaran Suhu Operasi | — | -55C to +175C (junction) |
| Channel Polarity | — | N-Channel (single) |