IAUCN04S7L009ATMA1 vs IAUCN04S7N037GATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN04S7L009ATMA1 dari Infineon dan IAUCN04S7N037GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN04S7L009ATMA1 IAUCN04S7N037GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IAUCN04S7L009ATMA1 —
Tipe Transistor N-Channel MOSFET —
Technology OptiMOS™ 7 (trench-gate) Trench MOSFET, N-Channel
Drain-Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id, Tc=25°C) 275 A (Tj) —
Continuous Drain Current (Id, Tc=100°C) 175 A —
Power Dissipation (Pd, Tc=25°C) 129 W —
Rds(on) Max @ Vgs=10V 0.91 mΩ —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical value] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Paket PG-TDSON-8-34 (TDSON EP) SSO4G 5x6 mm² (PG-THSOG-4-1)
Tipe Mounting Surface Mount Surface Mount (IMS substrate attach compatible)
Rentang Suhu Kerja -55 °C to +175 °C (Tj) [DATA_NEEDED: junction/ambient temperature limits]
Automotive Qualification AEC-Q101 qualified AEC-Q101
Level MSL 1 [DATA_NEEDED: MSL level]
Status RoHS Compliant Compliant
Series — OptiMOS 7
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at Tj — 91 A
On-State Resistance RDS(on) typical — 3.65 mΩ at VGS = 10 V
Power Dissipation (PD) at Tc — 57 W
Channel Type — N-Channel
Operating Mode — Enhancement
Gate Charge (Qg) typical — [DATA_NEEDED: total gate charge]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/range]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]

Spek dan Sumber

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