IAUCN04S7L009ATMA1 vs IAUCN04S7N037GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7L009ATMA1 disebabkan oleh Infineon dan IAUCN04S7N037GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN04S7L009ATMA1 IAUCN04S7N037GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IAUCN04S7L009ATMA1 —
Jenis Transistor N-Channel MOSFET —
Technology OptiMOS™ 7 (trench-gate) Trench MOSFET, N-Channel
Drain-Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id, Tc=25°C) 275 A (Tj) —
Continuous Drain Current (Id, Tc=100°C) 175 A —
Power Dissipation (Pd, Tc=25°C) 129 W —
Rds(on) Max @ Vgs=10V 0.91 mΩ —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical value] —
Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Kemasan PG-TDSON-8-34 (TDSON EP) SSO4G 5x6 mm² (PG-THSOG-4-1)
Jenis Pemasangan Surface Mount Surface Mount (IMS substrate attach compatible)
Gambaran Suhu Operasi -55 °C to +175 °C (Tj) [DATA_NEEDED: junction/ambient temperature limits]
Automotive Qualification AEC-Q101 qualified AEC-Q101
Aras MSL 1 [DATA_NEEDED: MSL level]
Status RoHS Compliant Compliant
Series — OptiMOS 7
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at Tj — 91 A
On-State Resistance RDS(on) typical — 3.65 mΩ at VGS = 10 V
Power Dissipation (PD) at Tc — 57 W
Channel Type — N-Channel
Operating Mode — Enhancement
Gate Charge (Qg) typical — [DATA_NEEDED: total gate charge]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/range]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]

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