IAUCN10S5L280DATMA1 vs IAUC60N04S6L030HATMA1 Perbandingan
Perbandingan bersamaan detil IAUCN10S5L280DATMA1 dari Infineon dan IAUC60N04S6L030HATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon
IAUCN10S5L280DATMA1 ✓ AktifInfineon
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUCN10S5L280DATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Configuration | Dual N-Channel MOSFET Array | Half-Bridge (2 N-Channel) |
| Drain-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) at Tj | 23 A | — |
| Power Dissipation (Pd) at Tc | 38 W | — |
| Paket | PG-TDSON-8-61 (SSO8) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Automotive Qualified | Yes (AEC-Q101, IAU prefix) | — |
| Technology | OptiMOS 5 Trench MOSFET | — |
| Rentang Suhu Kerja | -55C to +175C (junction) | — |
| Jumlah Pin | 8 | — |
| Level MSL | 1 | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | Compliant |
| Packing | Tape & Reel (T&R) | — |
| Part Series | — | OptiMOS 6 |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TJ | — | 60 A |
| On-Resistance R_DS(on) at VGS=10V | — | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | — | 35 nC |
| Output Capacitance (Coss) | — | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | — | 596 pF |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Maximum Power Dissipation (PD) at TC | — | 75 W |
| Suhu Hubung Kerja | — | -55 C to +175 C |
| Automotive Qualification | — | AEC-Q101 (per part number suffix) |