IAUCN10S5L280DATMA1 vs IAUC60N04S6L030HATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN10S5L280DATMA1 disebabkan oleh Infineon dan IAUC60N04S6L030HATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC60N04S6L030HATMA1 IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUCN10S5L280DATMA1 IAUC60N04S6L030HATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 —
Configuration Dual N-Channel MOSFET Array Half-Bridge (2 N-Channel)
Drain-Source Voltage (Vds) 100 V —
Continuous Drain Current (Id) at Tj 23 A —
Power Dissipation (Pd) at Tc 38 W —
Kemasan PG-TDSON-8-61 (SSO8) PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualified Yes (AEC-Q101, IAU prefix) —
Technology OptiMOS 5 Trench MOSFET —
Gambaran Suhu Operasi -55C to +175C (junction) —
Kiraan Pin 8 —
Aras MSL 1 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Packing Tape & Reel (T&R) —
Part Series — OptiMOS 6
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TJ — 60 A
On-Resistance R_DS(on) at VGS=10V — 3.0 mOhm (typical)
Total Gate Charge (Qg) at VGS=10V — 35 nC
Output Capacitance (Coss) — 2.128 nF
Reverse Transfer Capacitance (Crss) — 596 pF
Gate Threshold Voltage (VGS(th)) — 2 V
Maximum Power Dissipation (PD) at TC — 75 W
Suhu Hubungan Operasi — -55 C to +175 C
Automotive Qualification — AEC-Q101 (per part number suffix)

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