IAUCN10S5L280DATMA1 vs IAUC60N04S6L030HATMA1 比較

詳細並排比較 IAUCN10S5L280DATMA1 由 Infineon 與 IAUC60N04S6L030HATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUCN10S5L280DATMA1 IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon

IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon

IAUCN10S5L280DATMA1 ✓ 啟用中
Infineon
IAUC60N04S6L030HATMA1 IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 ✓ 啟用中

規格比較

參數 IAUCN10S5L280DATMA1 IAUC60N04S6L030HATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 —
Configuration Dual N-Channel MOSFET Array Half-Bridge (2 N-Channel)
Drain-Source Voltage (Vds) 100 V —
Continuous Drain Current (Id) at Tj 23 A —
Power Dissipation (Pd) at Tc 38 W —
封裝 PG-TDSON-8-61 (SSO8) PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm)
安裝類型 Surface Mount Surface Mount
Automotive Qualified Yes (AEC-Q101, IAU prefix) —
Technology OptiMOS 5 Trench MOSFET —
工作溫度範圍 -55C to +175C (junction) —
腳位數 8 —
MSL 等級 1 1 (per JEDEC J-STD-020)
RoHS 狀態 Compliant Compliant
Packing Tape & Reel (T&R) —
Part Series — OptiMOS 6
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TJ — 60 A
On-Resistance R_DS(on) at VGS=10V — 3.0 mOhm (typical)
Total Gate Charge (Qg) at VGS=10V — 35 nC
Output Capacitance (Coss) — 2.128 nF
Reverse Transfer Capacitance (Crss) — 596 pF
Gate Threshold Voltage (VGS(th)) — 2 V
Maximum Power Dissipation (PD) at TC — 75 W
工作接面溫度 — -55 C to +175 C
Automotive Qualification — AEC-Q101 (per part number suffix)

資料表與資源

瀏覽所有產品 建立 BOM 索取報價