IPB120P04P4L03ATMA2 vs IPD90P04P405ATMA2 Perbandingan
Perbandingan bersamaan detil IPB120P04P4L03ATMA2 dari Infineon dan IPD90P04P405ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon
IPB120P04P4L03ATMA2 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | IPB120P04P4L03ATMA2 | IPD90P04P405ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Transistor Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | -40 V |
| Continuous Drain Current (ID, Tc=25C) | 120 A | — |
| Power Dissipation (PD, Tc=25C) | 136 W | — |
| On-Resistance (RDS(on)) | 3.1 mΩ (typ, per Infineon summary) | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | ±20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/range] | [DATA_NEEDED: VGS(th) range] |
| Suhu Hubung Kerja | -55C to +175C | — |
| Paket | PG-TO263-3-2 (D2PAK) | PG-TO252-3-313 (DPAK, surface mount) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology Family | OptiMOS-P2 | — |
| Configuration | Single P-Channel MOSFET | — |
| Jumlah Pin | 3 (Gate, Drain, Source) | 3 (Gate, Drain, Source) |
| Level MSL | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant (per Infineon product page) | Compliant |
| Polarity | — | P-Channel |
| Continuous Drain Current (ID, Tc) | — | -90 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD, Tc) | — | 125 W |
| On-Resistance RDS(on) at VGS = -10 V | — | 4.7 mΩ (typical) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Rentang Suhu Kerja | — | -55 °C to +175 °C (Tj) |
| Process Technology | — | OptiMOS-P2 (trench + field plate) |