IPB120P04P4L03ATMA2 vs IPD90P04P405ATMA2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB120P04P4L03ATMA2 disebabkan oleh Infineon dan IPD90P04P405ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon
IPB120P04P4L03ATMA2 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | IPB120P04P4L03ATMA2 | IPD90P04P405ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Transistor Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | -40 V |
| Continuous Drain Current (ID, Tc=25C) | 120 A | — |
| Power Dissipation (PD, Tc=25C) | 136 W | — |
| On-Resistance (RDS(on)) | 3.1 mΩ (typ, per Infineon summary) | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | ±20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/range] | [DATA_NEEDED: VGS(th) range] |
| Suhu Hubungan Operasi | -55C to +175C | — |
| Kemasan | PG-TO263-3-2 (D2PAK) | PG-TO252-3-313 (DPAK, surface mount) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology Family | OptiMOS-P2 | — |
| Configuration | Single P-Channel MOSFET | — |
| Kiraan Pin | 3 (Gate, Drain, Source) | 3 (Gate, Drain, Source) |
| Aras MSL | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant (per Infineon product page) | Compliant |
| Polarity | — | P-Channel |
| Continuous Drain Current (ID, Tc) | — | -90 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD, Tc) | — | 125 W |
| On-Resistance RDS(on) at VGS = -10 V | — | 4.7 mΩ (typical) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Gambaran Suhu Operasi | — | -55 °C to +175 °C (Tj) |
| Process Technology | — | OptiMOS-P2 (trench + field plate) |