IPB60R040CFD7ATMA1 vs IPD60R600PFD7SAUMA1 Perbandingan

Perbandingan bersamaan detil IPB60R040CFD7ATMA1 dari Infineon dan IPD60R600PFD7SAUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB60R040CFD7ATMA1 IPD60R600PFD7SAUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS CFD7 —
Technology Superjunction (SJ) N-Channel MOSFET Superjunction (CoolMOS)
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc=25°C) 50 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10V 40 mΩ —
Gate Threshold Voltage VGS(th) typ 4 V —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
Dissipasi Listrik (TC=25°C) 227 W —
Rentang Suhu Kerja -55°C to +150°C —
Paket PG-TO263-3-2 (D2PAK) PG-TO252-3 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Integrated Body Diode Yes - ultra-fast CoolMOS CFD7 diode —
Level MSL 1 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Lead-Free Yes —
Target Applications Soft-switching topologies (ZVS phase-shift full-bridge, LLC) —
Series — CoolMOS PFD7
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (V_DS) — 600 V
Continuous Drain Current (I_D) — 6 A (Tc)
R_DS(on) Max — 600 mΩ @ V_GS = 10 V, I_D = 1.7 A
Total Gate Charge (Q_g) — 8.5 nC
Output Capacitance (C_oss) — 8 pF @ 400 V
Power Dissipation (P_D) — 31 W (Tc)
Gate Threshold Voltage (V_GS(th)) — 3.5 V (typ)
Suhu Kerja — -55°C to +150°C (Tj)
Reel Quantity — 2500

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