IPB60R040CFD7ATMA1 vs IPD60R600PFD7SAUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB60R040CFD7ATMA1 sa pamamagitan ng Infineon at IPD60R600PFD7SAUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 ✓ NakahandaInfineon
IPD60R600PFD7SAUMA1 - 600V 6A 600mΩ CoolMOS PFD7 MOSFET | Infineon
IPD60R600PFD7SAUMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPB60R040CFD7ATMA1 | IPD60R600PFD7SAUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | In Stock | — |
| Presyo ng Yunit (USD) | $5.19 | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS CFD7 | — |
| Technology | Superjunction (SJ) N-Channel MOSFET | Superjunction (CoolMOS) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 50 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 40 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 4 V | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | — |
| Pwersang Pinahihigpit (TC=25°C) | 227 W | — |
| Hanay ng Temperature na Operasyon | -55°C to +150°C | — |
| Packhaging | PG-TO263-3-2 (D2PAK) | PG-TO252-3 (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Integrated Body Diode | Yes - ultra-fast CoolMOS CFD7 diode | — |
| Level ng MSL | 1 | 1 (per JEDEC J-STD-020) |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Target Applications | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) | — |
| Series | — | CoolMOS PFD7 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 600 V |
| Continuous Drain Current (I_D) | — | 6 A (Tc) |
| R_DS(on) Max | — | 600 mΩ @ V_GS = 10 V, I_D = 1.7 A |
| Total Gate Charge (Q_g) | — | 8.5 nC |
| Output Capacitance (C_oss) | — | 8 pF @ 400 V |
| Power Dissipation (P_D) | — | 31 W (Tc) |
| Gate Threshold Voltage (V_GS(th)) | — | 3.5 V (typ) |
| Temperature na Operasyon | — | -55°C to +150°C (Tj) |
| Reel Quantity | — | 2500 |