IPB70N10S3L12ATMA1 vs IPB120P04P4L03ATMA2 Perbandingan

Perbandingan bersamaan detil IPB70N10S3L12ATMA1 dari Infineon dan IPB120P04P4L03ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB70N10S3L12ATMA1 IPB120P04P4L03ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS (IPB70N10) —
Tipe Transistor N-Channel MOSFET, Enhancement Mode —
Drain-Source Voltage (VDS) 100 V 40 V
Continuous Drain Current (ID) at TC=25°C 70 A —
Peak Drain Current (IDM) 180 A —
On-Resistance RDS(on) max at VGS=10V 11.8 mΩ —
Power Dissipation (PD) at TC=25°C 125 W —
Suhu Hubung Kerja -55 °C to +175 °C -55C to +175C
Paket / Case PG-TO263-3-2 (D2PAK, 2 Leads + Tab) —
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 Qualified —
MSL (Moisture Sensitivity Level) MSL1 (up to 260 °C peak reflow) —
RoHS / Green RoHS Compliant, Green Product —
Avalanche Tested 100 % Avalanche Tested —
Bebas Halogen Yes —
Transistor Polarity — P-Channel
Continuous Drain Current (ID, Tc=25C) — 120 A
Power Dissipation (PD, Tc=25C) — 136 W
On-Resistance (RDS(on)) — 3.1 mΩ (typ, per Infineon summary)
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/range]
Paket — PG-TO263-3-2 (D2PAK)
Technology Family — OptiMOS-P2
Configuration — Single P-Channel MOSFET
Jumlah Pin — 3 (Gate, Drain, Source)
Level MSL — [DATA_NEEDED: MSL level]
Status RoHS — Compliant (per Infineon product page)

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