IPB70N10S3L12ATMA1 vs IPB120P04P4L03ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB70N10S3L12ATMA1 disebabkan oleh Infineon dan IPB120P04P4L03ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB70N10S3L12ATMA1 IPB120P04P4L03ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS (IPB70N10) —
Jenis Transistor N-Channel MOSFET, Enhancement Mode —
Drain-Source Voltage (VDS) 100 V 40 V
Continuous Drain Current (ID) at TC=25°C 70 A —
Peak Drain Current (IDM) 180 A —
On-Resistance RDS(on) max at VGS=10V 11.8 mΩ —
Power Dissipation (PD) at TC=25°C 125 W —
Suhu Hubungan Operasi -55 °C to +175 °C -55C to +175C
Kemasan / Case PG-TO263-3-2 (D2PAK, 2 Leads + Tab) —
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 Qualified —
MSL (Moisture Sensitivity Level) MSL1 (up to 260 °C peak reflow) —
RoHS / Green RoHS Compliant, Green Product —
Avalanche Tested 100 % Avalanche Tested —
Boson Bebas Yes —
Transistor Polarity — P-Channel
Continuous Drain Current (ID, Tc=25C) — 120 A
Power Dissipation (PD, Tc=25C) — 136 W
On-Resistance (RDS(on)) — 3.1 mΩ (typ, per Infineon summary)
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/range]
Kemasan — PG-TO263-3-2 (D2PAK)
Technology Family — OptiMOS-P2
Configuration — Single P-Channel MOSFET
Kiraan Pin — 3 (Gate, Drain, Source)
Aras MSL — [DATA_NEEDED: MSL level]
Status RoHS — Compliant (per Infineon product page)

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