IPB70N10S3L12ATMA1 vs IPD90P04P4L04ATMA2 Perbandingan

Perbandingan bersamaan detil IPB70N10S3L12ATMA1 dari Infineon dan IPD90P04P4L04ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB70N10S3L12ATMA1 IPD90P04P4L04ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS (IPB70N10) —
Tipe Transistor N-Channel MOSFET, Enhancement Mode —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25°C 70 A —
Peak Drain Current (IDM) 180 A —
On-Resistance RDS(on) max at VGS=10V 11.8 mΩ —
Power Dissipation (PD) at TC=25°C 125 W —
Suhu Hubung Kerja -55 °C to +175 °C —
Paket / Case PG-TO263-3-2 (D2PAK, 2 Leads + Tab) —
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 Qualified AEC-Q101 qualified
MSL (Moisture Sensitivity Level) MSL1 (up to 260 °C peak reflow) —
RoHS / Green RoHS Compliant, Green Product —
Avalanche Tested 100 % Avalanche Tested —
Bebas Halogen Yes —
Part Number — IPD90P04P4L04ATMA2
Family — OptiMOS-P2
Channel Type — P-Channel
Drain-Source Voltage (Vds) — -40 V
Continuous Drain Current (Id) at Tc=25C — -90 A
Power Dissipation (Pd) at Tc=25C — 125 W
On-State Resistance Rds(on) typ at Vgs=-10V — 4.3 mOhm
Gate Threshold Voltage Vgs(th) typ — [DATA_NEEDED: Vgs(th) typical value]
Maximum Junction Temperature — 175 C
Rentang Suhu Kerja — -55 C to +175 C
Paket — PG-TO252-3-313 (DPAK)
Jumlah Pin — 3 (2 + Tab)
Status RoHS — Compliant
Level MSL — [DATA_NEEDED: MSL rating]

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