IPB70N10S3L12ATMA1 vs IPD90P04P4L04ATMA2 比較

詳細並排比較 IPB70N10S3L12ATMA1 由 Infineon 與 IPD90P04P4L04ATMA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPD90P04P4L04ATMA2 IPD90P04P4L04ATMA2 - -40V P-Ch 90A 4.3mOhm OptiMOS | Infineon

IPD90P04P4L04ATMA2 - -40V P-Ch 90A 4.3mOhm OptiMOS | Infineon

IPD90P04P4L04ATMA2 ✓ 啟用中

規格比較

參數 IPB70N10S3L12ATMA1 IPD90P04P4L04ATMA2
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS (IPB70N10) —
電晶體類型 N-Channel MOSFET, Enhancement Mode —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25°C 70 A —
Peak Drain Current (IDM) 180 A —
On-Resistance RDS(on) max at VGS=10V 11.8 mΩ —
Power Dissipation (PD) at TC=25°C 125 W —
工作接面溫度 -55 °C to +175 °C —
封裝 / 外殼 PG-TO263-3-2 (D2PAK, 2 Leads + Tab) —
安裝類型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 Qualified AEC-Q101 qualified
MSL (Moisture Sensitivity Level) MSL1 (up to 260 °C peak reflow) —
RoHS / Green RoHS Compliant, Green Product —
Avalanche Tested 100 % Avalanche Tested —
無鹵素 Yes —
Part Number — IPD90P04P4L04ATMA2
Family — OptiMOS-P2
Channel Type — P-Channel
Drain-Source Voltage (Vds) — -40 V
Continuous Drain Current (Id) at Tc=25C — -90 A
Power Dissipation (Pd) at Tc=25C — 125 W
On-State Resistance Rds(on) typ at Vgs=-10V — 4.3 mOhm
Gate Threshold Voltage Vgs(th) typ — [DATA_NEEDED: Vgs(th) typical value]
Maximum Junction Temperature — 175 C
工作溫度範圍 — -55 C to +175 C
封裝 — PG-TO252-3-313 (DPAK)
腳位數 — 3 (2 + Tab)
RoHS 狀態 — Compliant
MSL 等級 — [DATA_NEEDED: MSL rating]

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