IPB70N10S3L12ATMA1 vs IPD90P04P4L04ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB70N10S3L12ATMA1 disebabkan oleh Infineon dan IPD90P04P4L04ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB70N10S3L12ATMA1 IPD90P04P4L04ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS (IPB70N10) —
Jenis Transistor N-Channel MOSFET, Enhancement Mode —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25°C 70 A —
Peak Drain Current (IDM) 180 A —
On-Resistance RDS(on) max at VGS=10V 11.8 mΩ —
Power Dissipation (PD) at TC=25°C 125 W —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan / Case PG-TO263-3-2 (D2PAK, 2 Leads + Tab) —
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 Qualified AEC-Q101 qualified
MSL (Moisture Sensitivity Level) MSL1 (up to 260 °C peak reflow) —
RoHS / Green RoHS Compliant, Green Product —
Avalanche Tested 100 % Avalanche Tested —
Boson Bebas Yes —
Part Number — IPD90P04P4L04ATMA2
Family — OptiMOS-P2
Channel Type — P-Channel
Drain-Source Voltage (Vds) — -40 V
Continuous Drain Current (Id) at Tc=25C — -90 A
Power Dissipation (Pd) at Tc=25C — 125 W
On-State Resistance Rds(on) typ at Vgs=-10V — 4.3 mOhm
Gate Threshold Voltage Vgs(th) typ — [DATA_NEEDED: Vgs(th) typical value]
Maximum Junction Temperature — 175 C
Gambaran Suhu Operasi — -55 C to +175 C
Kemasan — PG-TO252-3-313 (DPAK)
Bilangan Pin — 3 (2 + Tab)
Status RoHS — Compliant
Aras MSL — [DATA_NEEDED: MSL rating]

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