IPD50N06S409ATMA2 vs IPD052N10NF2SATMA1 Perbandingan
Perbandingan bersamaan detil IPD50N06S409ATMA2 dari Infineon dan IPD052N10NF2SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD50N06S409ATMA2 | IPD052N10NF2SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | N-Channel MOSFET (OptiMOS) | MOSFET (Metal Oxide), OptiMOS 5 100V |
| Drain-Source Voltage (VDS) | 60 V | 100 V |
| Continuous Drain Current (ID) at Tc | 50 A | 118 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | 9 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (Pd) at Tc | 71 W | — |
| Suhu Hubung Kerja | -55 °C to +175 °C | — |
| Paket | PG-TO252-3-11 (DPAK) | — |
| Jumlah Pin | 3 (2 + Tab) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | [DATA_NEEDED] | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPD052N10NF2SATMA1 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta | — | 17 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 150 W |
| Drain-Source On-Resistance (RDS(on)) Max | — | 5.2 mΩ @ VGS=10V, ID=70A |
| Gate-Source Threshold Voltage (VGS(th)) Max | — | 3.8 V @ ID=84µA |
| Paket / Case | — | PG-TO252-3 (DPAK, SC-63) |
| Supplier Device Package | — | PG-TO252-3 |
| Suhu Kerja | — | -55 °C to +175 °C (TJ) |
| Number of Channels | — | 1 |