IPD50N06S409ATMA2 vs IPD052N10NF2SATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD50N06S409ATMA2 sa pamamagitan ng Infineon at IPD052N10NF2SATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD50N06S409ATMA2 - 60V 50A 9mΩ OptiMOS N-Ch MOSFET | Infineon
IPD50N06S409ATMA2 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IPD50N06S409ATMA2 | IPD052N10NF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | N-Channel MOSFET (OptiMOS) | MOSFET (Metal Oxide), OptiMOS 5 100V |
| Drain-Source Voltage (VDS) | 60 V | 100 V |
| Continuous Drain Current (ID) at Tc | 50 A | 118 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | 9 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (Pd) at Tc | 71 W | — |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | — |
| Packhaging | PG-TO252-3-11 (DPAK) | — |
| Bilang ng Pin | 3 (2 + Tab) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | [DATA_NEEDED] | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPD052N10NF2SATMA1 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta | — | 17 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 150 W |
| Drain-Source On-Resistance (RDS(on)) Max | — | 5.2 mΩ @ VGS=10V, ID=70A |
| Gate-Source Threshold Voltage (VGS(th)) Max | — | 3.8 V @ ID=84µA |
| Packhaging / Kaso | — | PG-TO252-3 (DPAK, SC-63) |
| Supplier Device Package | — | PG-TO252-3 |
| Temperature na Operasyon | — | -55 °C to +175 °C (TJ) |
| Number of Channels | — | 1 |