IPD50N06S409ATMA2 vs IPD22N08S2L50ATMA1 Perbandingan
Perbandingan bersamaan detil IPD50N06S409ATMA2 dari Infineon dan IPD22N08S2L50ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPD22N08S2L50ATMA1 - 75V 27A OptiMOS N-Channel MOSFET | Infineon
IPD22N08S2L50ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPD50N06S409ATMA2 | IPD22N08S2L50ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | N-Channel MOSFET (OptiMOS) | — |
| Drain-Source Voltage (VDS) | 60 V | 75 V |
| Continuous Drain Current (ID) at Tc | 50 A | — |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | 9 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | Logic-Level (typ. 1.7-2.5 V) |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (Pd) at Tc | 71 W | — |
| Suhu Hubung Kerja | -55 °C to +175 °C | -55 C to +175 C |
| Paket | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) |
| Jumlah Pin | 3 (2 + Tab) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 Qualified |
| Status RoHS | Compliant | — |
| Lead-Free / Halogen-Free | [DATA_NEEDED] | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS |
| Tipe Transistor | — | N-Channel MOSFET (Enhancement Mode) |
| Continuous Drain Current (ID, Tc) | — | 27 A |
| Maximum Power Dissipation (Ptot) | — | 75 W |
| On-Resistance RDS(on) max @ VGS=10V | — | 23 mOhm (typical) |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) max at VGS=10V and VGS=4.5V] |
| Avalanche Energy Rating | — | 100% Avalanche Tested |
| Level MSL | — | MSL1 (per JEDEC J-STD-020, up to 260 C peak reflow) |
| Lead-Free / RoHS | — | Yes (Green Package) |