IPD50N06S409ATMA2 vs IPD22N08S2L50ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD50N06S409ATMA2 disebabkan oleh Infineon dan IPD22N08S2L50ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPD22N08S2L50ATMA1 - 75V 27A OptiMOS N-Channel MOSFET | Infineon
IPD22N08S2L50ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IPD50N06S409ATMA2 | IPD22N08S2L50ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | N-Channel MOSFET (OptiMOS) | — |
| Drain-Source Voltage (VDS) | 60 V | 75 V |
| Continuous Drain Current (ID) at Tc | 50 A | — |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | 9 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | Logic-Level (typ. 1.7-2.5 V) |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (Pd) at Tc | 71 W | — |
| Suhu Hubungan Operasi | -55 °C to +175 °C | -55 C to +175 C |
| Kemasan | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) |
| Kiraan Pin | 3 (2 + Tab) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 Qualified |
| Status RoHS | Compliant | — |
| Lead-Free / Halogen-Free | [DATA_NEEDED] | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS |
| Jenis Transistor | — | N-Channel MOSFET (Enhancement Mode) |
| Continuous Drain Current (ID, Tc) | — | 27 A |
| Maximum Power Dissipation (Ptot) | — | 75 W |
| On-Resistance RDS(on) max @ VGS=10V | — | 23 mOhm (typical) |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) max at VGS=10V and VGS=4.5V] |
| Avalanche Energy Rating | — | 100% Avalanche Tested |
| Aras MSL | — | MSL1 (per JEDEC J-STD-020, up to 260 C peak reflow) |
| Lead-Free / RoHS | — | Yes (Green Package) |