IPD60R2K0PFD7SAUMA1 vs IPB60R280P7ATMA1 Perbandingan
Perbandingan bersamaan detil IPD60R2K0PFD7SAUMA1 dari Infineon dan IPB60R280P7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPD60R2K0PFD7SAUMA1 - 600V CoolMOS PFD7 N-Channel MOSFET | Infineon
IPD60R2K0PFD7SAUMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | IPD60R2K0PFD7SAUMA1 | IPB60R280P7ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $0,88 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS PFD7 | — |
| Technology | Superjunction N-Channel MOSFET | Superjunction (SJ) |
| Drain-Source Voltage (V_DS) | 600 V | — |
| Continuous Drain Current (I_D) at T_C | 3 A | — |
| Power Dissipation (P_D) at T_C | 20 W | — |
| R_DS(on) at V_GS = 10 V | 2000 milliohm (typ) | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical and min/max] | — |
| Paket | PG-TO252-3-344 (DPAK) | PG-TO263-3 (D2PAK) |
| Jumlah Pin | 3 (Gate, Drain, Source) | 3 (2 + Tab) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 C to +150 C (junction) | -55 °C to +150 °C (T_j max) |
| Tingkat Sensitivitas Kekeringan (MSL) | MSL2 (per JEDEC J-STD-020) | — |
| RoHS Compliance | Compliant | — |
| Standard Pack Quantity | 2500 pcs / 13-inch reel | — |
| Product Family | — | CoolMOS P7 (600 V) |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, T_C=25°C) | — | 12 A |
| On-Resistance R_DS(on) max (V_GS=10V) | — | 280 mOhm |
| Gate-Source Threshold V_GS(th) typ | — | 3.5 V |
| Power Dissipation P_D (T_C=25°C) | — | 53 W |
| Configuration | — | Single N-Channel |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Generation | — | 7th Gen CoolMOS (successor to P6) |