IPD60R2K0PFD7SAUMA1 vs IPB60R280P7ATMA1 比較
詳細並排比較 IPD60R2K0PFD7SAUMA1 由 Infineon 與 IPB60R280P7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPD60R2K0PFD7SAUMA1 - 600V CoolMOS PFD7 N-Channel MOSFET | Infineon
IPD60R2K0PFD7SAUMA1 ✓ 啟用中
規格比較
| 參數 | IPD60R2K0PFD7SAUMA1 | IPB60R280P7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | — | $0.88 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS PFD7 | — |
| Technology | Superjunction N-Channel MOSFET | Superjunction (SJ) |
| Drain-Source Voltage (V_DS) | 600 V | — |
| Continuous Drain Current (I_D) at T_C | 3 A | — |
| Power Dissipation (P_D) at T_C | 20 W | — |
| R_DS(on) at V_GS = 10 V | 2000 milliohm (typ) | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical and min/max] | — |
| 封裝 | PG-TO252-3-344 (DPAK) | PG-TO263-3 (D2PAK) |
| 腳位數 | 3 (Gate, Drain, Source) | 3 (2 + Tab) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55 C to +150 C (junction) | -55 °C to +150 °C (T_j max) |
| 濕度敏感等級 (MSL) | MSL2 (per JEDEC J-STD-020) | — |
| RoHS Compliance | Compliant | — |
| Standard Pack Quantity | 2500 pcs / 13-inch reel | — |
| Product Family | — | CoolMOS P7 (600 V) |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, T_C=25°C) | — | 12 A |
| On-Resistance R_DS(on) max (V_GS=10V) | — | 280 mOhm |
| Gate-Source Threshold V_GS(th) typ | — | 3.5 V |
| Power Dissipation P_D (T_C=25°C) | — | 53 W |
| Configuration | — | Single N-Channel |
| RoHS 狀態 | — | Compliant |
| Lead-Free | — | Yes |
| Generation | — | 7th Gen CoolMOS (successor to P6) |