IPD90N06S404ATMA2 vs IPD068N10N3GATMA1 Perbandingan

Perbandingan bersamaan detil IPD90N06S404ATMA2 dari Infineon dan IPD068N10N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPD90N06S404ATMA2 IPD90N06S404ATMA2 - 60V 90A N-Ch OptiMOS MOSFET | Infineon

IPD90N06S404ATMA2 - 60V 90A N-Ch OptiMOS MOSFET | Infineon

IPD90N06S404ATMA2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPD90N06S404ATMA2 IPD068N10N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 60 V 100 V
Continuous Drain Current (ID, Tc) 90 A —
Power Dissipation (PD, Tc) 150 W —
On-Resistance (RDS(on)) 3.8 mΩ (typ) at VGS = 10 V —
Paket PG-TO252-3-11 (DPAK), 3-pin surface mount PG-TO252-3 (DPAK, 2 leads + tab)
Operating Temperature (TJ max) 175 °C —
Peak Reflow Temperature 260 °C (MSL1) —
Avalanche Rating 100% Avalanche Tested —
Automotive Qualification AEC-Q101 —
Technology OptiMOS OptiMOS 3 (N-Channel, Enhancement Mode)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant (Green Product) Compliant
Level MSL MSL1 1
Polarity Single N-Channel —
Manufacturer — Infineon Technologies
Part Number — IPD068N10N3GATMA1
Continuous Drain Current (ID) at Tc — 90 A
On-Resistance RDS(on) max — 6.8 mOhm
Power Dissipation (PD) at Tc — 150 W
Gate Threshold Voltage VGS(th) — 2.0 V to 4.0 V (typical)
Suhu Hubung Kerja — -55 C to +175 C
Channel Type — N-Channel
Configuration — Single
Packing — Tape & Reel (T/R)
Qualification — Industrial (non-automotive)

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