IPD90N06S404ATMA2 vs IPD068N10N3GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD90N06S404ATMA2 sa pamamagitan ng Infineon at IPD068N10N3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD068N10N3GATMA1 - 100V 90A OptiMOS 3 N-Channel MOSFET | Infineon
IPD068N10N3GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD90N06S404ATMA2 | IPD068N10N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 60 V | 100 V |
| Continuous Drain Current (ID, Tc) | 90 A | — |
| Power Dissipation (PD, Tc) | 150 W | — |
| On-Resistance (RDS(on)) | 3.8 mΩ (typ) at VGS = 10 V | — |
| Packhaging | PG-TO252-3-11 (DPAK), 3-pin surface mount | PG-TO252-3 (DPAK, 2 leads + tab) |
| Operating Temperature (TJ max) | 175 °C | — |
| Peak Reflow Temperature | 260 °C (MSL1) | — |
| Avalanche Rating | 100% Avalanche Tested | — |
| Automotive Qualification | AEC-Q101 | — |
| Technology | OptiMOS | OptiMOS 3 (N-Channel, Enhancement Mode) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | Compliant (Green Product) | Compliant |
| Level ng MSL | MSL1 | 1 |
| Polarity | Single N-Channel | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPD068N10N3GATMA1 |
| Continuous Drain Current (ID) at Tc | — | 90 A |
| On-Resistance RDS(on) max | — | 6.8 mOhm |
| Power Dissipation (PD) at Tc | — | 150 W |
| Gate Threshold Voltage VGS(th) | — | 2.0 V to 4.0 V (typical) |
| Temperature ng Junction na Operasyon | — | -55 C to +175 C |
| Channel Type | — | N-Channel |
| Configuration | — | Single |
| Packing | — | Tape & Reel (T/R) |
| Qualification | — | Industrial (non-automotive) |