IPD90P04P405ATMA2 vs IPB120P04P4L03ATMA2 Perbandingan
Perbandingan bersamaan detil IPD90P04P405ATMA2 dari Infineon dan IPB120P04P4L03ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon
IPB120P04P4L03ATMA2 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPD90P04P405ATMA2 | IPB120P04P4L03ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -40 V | 40 V |
| Continuous Drain Current (ID, Tc) | -90 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD, Tc) | 125 W | — |
| On-Resistance RDS(on) at VGS = -10 V | 4.7 mΩ (typical) | — |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) range] | [DATA_NEEDED: VGS(th) typ/range] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Rentang Suhu Kerja | -55 °C to +175 °C (Tj) | — |
| Paket | PG-TO252-3-313 (DPAK, surface mount) | PG-TO263-3-2 (D2PAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 (Gate, Drain, Source) | 3 (Gate, Drain, Source) |
| Process Technology | OptiMOS-P2 (trench + field plate) | — |
| Level MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Status RoHS | Compliant | Compliant (per Infineon product page) |
| Transistor Polarity | — | P-Channel |
| Continuous Drain Current (ID, Tc=25C) | — | 120 A |
| Power Dissipation (PD, Tc=25C) | — | 136 W |
| On-Resistance (RDS(on)) | — | 3.1 mΩ (typ, per Infineon summary) |
| Suhu Hubung Kerja | — | -55C to +175C |
| Technology Family | — | OptiMOS-P2 |
| Configuration | — | Single P-Channel MOSFET |