IPD90P04P405ATMA2 vs IPB120P04P4L03ATMA2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD90P04P405ATMA2 disebabkan oleh Infineon dan IPB120P04P4L03ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPB120P04P4L03ATMA2 - 40V P-Channel MOSFET, 120A, D2PAK | Infineon
IPB120P04P4L03ATMA2 ✓ AktifPengandingan Spesifikasi
| Parametr | IPD90P04P405ATMA2 | IPB120P04P4L03ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -40 V | 40 V |
| Continuous Drain Current (ID, Tc) | -90 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (PD, Tc) | 125 W | — |
| On-Resistance RDS(on) at VGS = -10 V | 4.7 mΩ (typical) | — |
| Gate-Source Voltage (VGS) max | ±20 V | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) range] | [DATA_NEEDED: VGS(th) typ/range] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Gambaran Suhu Operasi | -55 °C to +175 °C (Tj) | — |
| Kemasan | PG-TO252-3-313 (DPAK, surface mount) | PG-TO263-3-2 (D2PAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 3 (Gate, Drain, Source) | 3 (Gate, Drain, Source) |
| Process Technology | OptiMOS-P2 (trench + field plate) | — |
| Aras MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Status RoHS | Compliant | Compliant (per Infineon product page) |
| Transistor Polarity | — | P-Channel |
| Continuous Drain Current (ID, Tc=25C) | — | 120 A |
| Power Dissipation (PD, Tc=25C) | — | 136 W |
| On-Resistance (RDS(on)) | — | 3.1 mΩ (typ, per Infineon summary) |
| Suhu Hubungan Operasi | — | -55C to +175C |
| Technology Family | — | OptiMOS-P2 |
| Configuration | — | Single P-Channel MOSFET |