IPL60R210P6AUMA1 vs IPL60R180P6AUMA1 Perbandingan

Perbandingan bersamaan detil IPL60R210P6AUMA1 dari Infineon dan IPL60R180P6AUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPL60R210P6AUMA1 IPL60R180P6AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IPL60R210P6AUMA1 —
Series CoolMOS™ P6 —
FET Type N-Channel —
Technology MOSFET (Superjunction / CoolMOS™) CoolMOS P6 (Superjunction N-channel MOSFET)
Drain-Source Voltage (Vdss) 600 V —
Continuous Drain Current (Id) @ Tc=25°C 19.2 A —
On-Resistance (RDS(on)) max 210 mΩ —
Power Dissipation (Pd) @ Tc=25°C 151 W —
Paket PG-VSON-4 (ThinPAK) Surface Mount PG-VSON-4 (Thin-PAK) surface mount
Tipe Mounting Surface Mount Surface Mount
Gate-Source Voltage (Vgs) [DATA_NEEDED: Vgs max rating] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical] —
Rentang Suhu Kerja [DATA_NEEDED: Tj max / operating range] —
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL rating] —
Packaging Tape & Reel —
Packing Quantity [DATA_NEEDED: reel qty] —
Drain-Source Voltage (VDS) — 600 V
Gate-Source Voltage (VGS) — -20 V to +20 V (max)
Continuous Drain Current (ID) at Tc=25°C — 22.4 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Static Drain-Source On-Resistance (RDS(on)) max @ VGS=10V — 180 mΩ
Power Dissipation (Ptot) at Tc=25°C — 176 W
Rentang Suhu Hubung Kerja — -55 °C to +150 °C
Storage Temperature Range — -55 °C to +150 °C
Thermal Resistance Junction-to-Case (RθJC) — [DATA_NEEDED: RθJC value]
Gate Threshold Voltage (VGS(th)) — 2.5 V to 3.5 V (typical 3.0 V)
MSL (Moisture Sensitivity Level) — MSL 1 (per JEDEC J-STD-020)
Lead-Free — Yes

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