IPL60R210P6AUMA1 vs IPL60R180P6AUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPL60R210P6AUMA1 disebabkan oleh Infineon dan IPL60R180P6AUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPL60R210P6AUMA1 IPL60R180P6AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IPL60R210P6AUMA1 —
Series CoolMOS™ P6 —
FET Type N-Channel —
Technology MOSFET (Superjunction / CoolMOS™) CoolMOS P6 (Superjunction N-channel MOSFET)
Drain-Source Voltage (Vdss) 600 V —
Continuous Drain Current (Id) @ Tc=25°C 19.2 A —
On-Resistance (RDS(on)) max 210 mΩ —
Power Dissipation (Pd) @ Tc=25°C 151 W —
Kemasan PG-VSON-4 (ThinPAK) Surface Mount PG-VSON-4 (Thin-PAK) surface mount
Jenis Pemasangan Surface Mount Surface Mount
Gate-Source Voltage (Vgs) [DATA_NEEDED: Vgs max rating] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical] —
Gambaran Suhu Operasi [DATA_NEEDED: Tj max / operating range] —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL rating] —
Packaging Tape & Reel —
Packing Quantity [DATA_NEEDED: reel qty] —
Drain-Source Voltage (VDS) — 600 V
Gate-Source Voltage (VGS) — -20 V to +20 V (max)
Continuous Drain Current (ID) at Tc=25°C — 22.4 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Static Drain-Source On-Resistance (RDS(on)) max @ VGS=10V — 180 mΩ
Power Dissipation (Ptot) at Tc=25°C — 176 W
Gambaran Suhu Hubungan Operasi — -55 °C to +150 °C
Storage Temperature Range — -55 °C to +150 °C
Thermal Resistance Junction-to-Case (RθJC) — [DATA_NEEDED: RθJC value]
Gate Threshold Voltage (VGS(th)) — 2.5 V to 3.5 V (typical 3.0 V)
MSL (Moisture Sensitivity Level) — MSL 1 (per JEDEC J-STD-020)
Lead-Free — Yes

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