IPP069N20NM6AKSA1 vs IRFH5015TRPBF Perbandingan
Perbandingan bersamaan detil IPP069N20NM6AKSA1 dari Infineon dan IRFH5015TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPP069N20NM6AKSA1 - 200V 136A OptiMOS 6 N-Channel MOSFET | Infineon
IPP069N20NM6AKSA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | IPP069N20NM6AKSA1 | IRFH5015TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 200 V | 150 V |
| Continuous Drain Current (ID) at TC=25C | 136 A | 56 A |
| Continuous Drain Current (ID) at TA=25C | 15.3 A | 10 A |
| Power Dissipation (PD) at TC=25C | 300 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| On-Resistance RDS(on) max at VGS=10V | 6.9 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Total Gate Charge at VGS=10V (Qg) | [DATA_NEEDED: Qg value] | — |
| Rentang Suhu Kerja | -55C to +175C | — |
| Paket | PG-TO220-3-1 (TO-220-3 through-hole, 3+tab) | 8-PQFN (5x6) SuperSO8 |
| Tipe Mounting | Through Hole | Surface Mount |
| Technology | OptiMOS 6 trench MOSFET | IR MOSFET (HEXFET) |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Level MSL | N/A (through-hole package) | — |
| Tab Connection | Electrically connected to Drain | — |
| On-Resistance (RDS(on)) max | — | 31 mOhm |
| Total Gate Charge (Qg) | — | 33 nC |
| Power Dissipation (TA=25C) | — | 3.6 W |
| Power Dissipation (TC=25C) | — | 156 W |
| Gate Drive Voltage (VGS recommended) | — | 10 V |
| Configuration | — | Single with built-in body diode |
| Suhu Kerja | — | -55C to +150C (TJ max) |